High performance MMICs with submillimeter wave InP-based HEMTs

This paper presents some recently developed MMICs based on a 0.1-/spl mu/m gate-length InAlAs/InGaAs/InP HEMT process with an f/sub max/ above 600 GHz. InP-based HEMTs provide more power gain and lower noise at higher frequencies than any other transistor, including GaAs-based pHEMTs. A number of state-of-the-art InP HEMT MMICs will be presented. This includes a 150-205 GHz amplifier with 15 dB of gain, a broadband 60-140 GHz amplifier with 25 mW output power at 140 GHz, a high gain Ka-band LNA and static frequency-divider circuits operating at clock rates above 45 GHz. The high frequency performance of a next-generation 0.08-/spl mu/m-gate InAlAsSb/InAlAs/InGaAs/InP HEMT technology will also be presented.

[1]  R. Lai,et al.  0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/ , 1994, IEEE Electron Device Letters.

[2]  Hiroshi Ito,et al.  Ultra-high-speed InAlAs/InGaAs HEMT ICs using pn-level-shift diodes , 1995, Proceedings of International Electron Devices Meeting.

[3]  P. M. Smith.  Status of InP HEMT technology for microwave receiver applications , 1996, IMS 1996.

[4]  P.M. Smith.  Status of InP HEMT technology for microwave receiver applications , 1996, IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.

[5]  H.-C. Sun,et al.  A high-gain monolithic D-band InP HEMT amplifier , 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).

[6]  L. Samoska,et al.  190 GHz InP HEMT MMIC LNA with dry etched backside vias , 1999, Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).

[7]  M. Micovic,et al.  SUBMILLIMETER WAVE InP-BASED HEMTs with fmax over 600 GHz , 1999 .

[8]  M. Micovic,et al.  Electrical characterisation of short gate In/sub 0.60/Ga/sub 0.40/As-In/sub 0.36/Al/sub 0.64/As/sub 0.84/Sb/sub 0.16/ high electron mobility transistors on InP substrate , 2000 .

[9]  Sander Weinreb,et al.  Low-cost high-performance W-band LNA MMICs for millimeter-wave imaging , 2000, Defense, Security, and Sensing.

[10]  Sander Weinreb,et al.  Ultra Broadband Low Power MMIC Amplifier , 2000, 2000 30th European Microwave Conference.