论文信息 - Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering - 字舞流文

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

L. Wernersson | M. Borg | R. Timm | A. Mikkelsen | Jisheng Pan | Zheshen Li | Giulio D’Acunto | Yi Liu | S. Benter | Zhihua Yong | Karl‐Magnus Persson | Mamidala Saketh Ram | Sandra Benter