Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
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L. Wernersson | M. Borg | R. Timm | A. Mikkelsen | Jisheng Pan | Zheshen Li | Giulio D’Acunto | Yi Liu | S. Benter | Zhihua Yong | Karl‐Magnus Persson | Mamidala Saketh Ram | Sandra Benter