论文信息 - A new approach to current-voltage characteristics formation for short-channel MOSFET's

A new approach to current-voltage characteristics formation for short-channel MOSFET's

A new approach to the current-voltage (I-V) characteristics formulation for short-channel MOSFET's by incorporating the channel length modulation, mobility degradation, drain induced barrier lowering, and threshold voltage variation into Pao-Sah's equation is presented. Results show that the calculated I-V characteristics agree well with the experimental ones for devices with effective channel length in the range of 0.44/spl sim/20 /spl mu/m. Compared with the existing models, the model has the advantages of less number of model parameters and simpler form of the current-voltage relationship. >

H. Wong | H. Wong

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