Defect engineering in Czochralski silicon by electron irradiation at different temperatures
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[1] V. Markevich,et al. EXPERIMENTAL EVIDENCE OF THE OXYGEN DIMER IN SILICON , 1998 .
[2] Lindström,et al. Clustering of oxygen atoms in silicon at 450 degrees C: A new approach to thermal donor formation. , 1994, Physical review letters.
[3] H. Stein. Self‐interstitials and the 935 cm−1 band in silicon , 1989 .
[4] W. Bullis,et al. Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption , 1989 .
[5] S. Chappell,et al. LETTER TO THE EDITOR: The selective trapping of self-interstitials by interstitial carbon impurities in electron irradiated silicon , 1987 .
[6] Svensson Bg,et al. Kinetic study of the 830- and 889-cm-1 infrared bands during annealing of irradiated silicon. , 1986 .
[7] T. S. Moss,et al. Handbook on semiconductors , 1980 .
[8] James W. Corbett,et al. EPR studies of defects in electron-irradiated silicon: A triplet state of vacancy-oxygen complexes , 1976 .
[9] G. D. Watkins,et al. Radiation effects in semiconductors , 1971 .
[10] R. Newman,et al. Electron irradiation damage in silicon containing carbon and oxygen , 1969 .