Fabrication and Characterization of 14-nm-Gate-Length EJ-MOSFETs

We have fabricated Electrically variable shallow Junction MOSFETs (EJ-MOSFETs) with ultrashallow source/drain junctions to investigate transistor characteristics and physical phenomena in ultra-fine gate MOSFETs. By using electron-beam (EB) lithography and an ultrahigh-resolution EB resist (calixarene), we could achieve a gate length of 14 nm for the first time. Although significant short-channel effects'(SCEs) were observed, the fabricated device exhibited transistor operation at room temperature.