论文信息 - Fabrication and characterization of Al gate n-MOSFET, on-chip fabricated with Si3N4 ISFET

Fabrication and characterization of Al gate n-MOSFET, on-chip fabricated with Si3N4 ISFET

This paper reports the fabrication of n-type MOSFET using Si3N4 as dielectric on the same wafer as ISFET for ISFET characterization. The paper presents the fabrication, simulation and characterization of metal-oxide field-effect transistor (MOSFET). The gate of the ISFET is stacked with Si3N4 sensing membrane layer that has been deposited using LPCVD system to cover the gate area. Output and transfer characteristics of on-chip fabricated MOSFET are obtained and measured in order to study the fabricated ISFET behavior to be used as pH sensor. Silicon nitride is preferred over silicon dioxide sensing film/dielectric (in case of MOSFET) which has better sensitivity and low drift. Process simulations were performed using Silvaco® TCAD tool.

[1] Cecilia Jiménez-Jorquera,et al. ISFET Based Microsensors for Environmental Monitoring , 2009, Sensors.

[2] V. Khanna. Fabrication of ISFET microsensor by diffusion-based Al gate NMOS process and determination of its p H sensitivity from transfer characteristics , 2012 .

[3] R. Mukhiya,et al. MODELING AND SIMULATION OF ISFET MICROSENSOR FOR DIFFERENT SENSING FILMS , 2014 .

[4] Sang Kyu Kim,et al. Ion-Sensitive Field-Effect Transistor for Biological Sensing , 2009, Sensors.

[5] C. Schönenberger,et al. Nernst limit in dual-gated Si-nanowire FET sensors. , 2010, Nano letters.

[6] V. Khanna. Advances in chemical sensors, biosensors and microsystems based on ion-sensitive field-effect transistor , 2007 .

[7] J. Colinge. Silicon-on-Insulator Technology: Materials to VLSI , 1991 .

[8] Piet Bergveld,et al. Thirty years of ISFETOLOGY ☆: What happened in the past 30 years and what may happen in the next 30 years , 2003 .

[9] P Bergveld,et al. Development of an ion-sensitive solid-state device for neurophysiological measurements. , 1970, IEEE transactions on bio-medical engineering.