Genetic algorithm designed silicon integrated photonic lens operating at 1550 nm

We experimentally demonstrate a photonic integrated lens made of holes in a silicon slab operating at λ0=1550 nm. The lens has been designed using a genetic algorithm in conjunction with the two-dimensional multiple scattering theory and fabricated using silicon-on-insulator technology. scanning near field optical microscopy measurements have been performed in order to measure the light intensity distribution on the device surface. The obtained full width at half maximum of the focus is 0.23 λ0, which is in good agreement with three-dimensional finite-difference time-domain simulations, and overcomes the diffraction limit in air, where the measurements are made.

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