Oscillation characteristics in terahertz transmission through a dipole-based metamaterial

A dual-film metamaterial is proposed that presents oscillation characteristics during terahertz transmission. An n-type gallium arsenide (n-GaAs) film with a free electron density of 4.7 × 1017 cm−3 is grown on a semi-insulating GaAs wafer. Then, a metallic film, which is fabricated on the n-GaAs film, is patterned into an arrayed single-gap microstructure with narrowed edges using traditional ultraviolet photolithography methods. The metal and n-GaAs films form a Schottky junction. The transmission frequency spectrum of the dual-film metamaterial contains an obvious fluctuation with a frequency interval of f = 0.15 THz in the 0.1–1 THz range, and the experimental results show that the frequency region of the locally intensive oscillatory signal essentially agrees with that of the characteristic transmission spectrum of the dual-film metamaterial in the 0.1–1 THz range. The terahertz characteristic transmission spectrum of the fabricated metamaterial is measured at the central frequency of ∼0.515 THz, and...

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