论文信息 - Effect of Doping Density on the Charge Rearrangement and Interface Dipole at the Molecule–Silicon Interface - 字舞流文

Effect of Doping Density on the Charge Rearrangement and Interface Dipole at the Molecule–Silicon Interface

L. Kronik | A. Kahn | D. Cahen | O. Sinai | H. Cohen | H. Zuilhof | S. Pujari | A. Vilan | O. Yaffe