Characterization of chemically assisted ion beam etching and form birefringence structure fabrication in GaAs using SU-8

We describe an approach to use the thin layer of SU-8 submicron pattern produced by holographic lithography as dry etching mask in chemically assisted ion beam etching (CAIBE) system. The effect of chlorine gas flow on etched sidewall was investigated; by matching the lateral etch and deposition rate, etching selectivity of about 7:1 has been achieved with vertical and smooth sidewall and damage-free upper portion of the etched structure. As an application, a half wavelength retardation plate for 1.55 mm wavelength was designed, fabricated and characterized.

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