Advanced SiC Power Modules for 13.8 kV Power Distribution

Northrop Grumman Corporation has been developing 10 kV SiC MOSFETs and Junction Barrier Schottky diodes for application to a 13.8 kV 2.7 MVA solid-state power substation. The design of half-bridge power modules has extensively used simulation, from electron-level device simulations to the system-level trade studies, to develop the most efficient module for use in the SSPS.