论文信息 - 25 to 300 degrees C ultra-low-power voltage reference compatible with standard SOICMOS process

25 to 300 degrees C ultra-low-power voltage reference compatible with standard SOICMOS process

A new patented voltage reference is presented. The very simple architecture, which can be implemented in standard silicon-on-insulator CMOS processes, gives very low power consumption (from 1 pA at 25degreesC up to 50 nA at 300degreesC) and good voltage stability (about 200 ppm/degreesC) over the whole temperature range.

Denis Flandre | Stéphane Adriaensen | Vincent Dessard

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