Diffusivity of native defects in GaN
暂无分享,去创建一个
[1] David C. Look,et al. Thermal Stability of Isolated and Complexed Ga Vacancies in GaN Bulk Crystals , 2001 .
[2] Jen-Inn Chyi,et al. Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells , 2001 .
[3] Risto M. Nieminen,et al. Point-defect complexes and broadband luminescence in GaN and AlN , 1997 .
[4] R. Dimitrov,et al. Nitrogen Effusion and Self-Diffusion in Ga14N/Ga15N Isotope Heterostructures , 1998 .
[5] Jörg Neugebauer,et al. Gallium vacancies and the yellow luminescence in GaN , 1996 .
[6] Jörg Neugebauer,et al. First-principles studies of beryllium doping of GaN , 2001 .
[7] Briggs,et al. Native defects in gallium nitride. , 1995, Physical review. B, Condensed matter.
[8] H. Monkhorst,et al. SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS , 1976 .
[9] Van de Walle CG,et al. Atomic geometry and electronic structure of native defects in GaN. , 1994, Physical review. B, Condensed matter.
[10] H. Morkoç,et al. Yellow and green luminescence in a freestanding GaN template , 2001 .
[11] C. Stampfl,et al. Defects and defect reactions in semiconductor nitrides , 1999 .
[12] Steven G. Louie,et al. Nonlinear ionic pseudopotentials in spin-density-functional calculations , 1982 .
[13] Zhang,et al. Energetics of the As vacancy in GaAs: The stability of the 3+ charge state. , 1994, Physical review. B, Condensed matter.
[14] Ferdinand Scholz,et al. Optical detection of magnetic resonance in electron-irradiated GaN , 1997 .
[15] S. Denbaars,et al. In situ studies of the effect of silicon on GaN growth modes , 2000 .
[16] Mizuta,et al. Detection of interstitial Ga in GaN , 2000, Physical review letters.
[17] A. F. Wright. Interaction of hydrogen with nitrogen interstitials in wurtzite GaN , 2001 .
[18] Matthias Scheffler,et al. Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics , 1997 .
[19] W. Kohn,et al. Self-Consistent Equations Including Exchange and Correlation Effects , 1965 .
[20] Jari Likonen,et al. Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers , 2001 .
[21] K. Saarinen,et al. Vacancy defects as compensating centers in Mg-doped GaN. , 2003, Physical review letters.
[22] P. Hohenberg,et al. Inhomogeneous Electron Gas , 1964 .
[23] G. Yi,et al. Compensation of n‐type GaN , 1996 .
[24] G. D. Watkins,et al. OPTICAL DETECTION OF ELECTRON PARAMAGNETIC RESONANCE IN ELECTRON-IRRADIATED GAN , 1999 .
[25] Northrup,et al. Compensation of p-type doping in ZnSe: The role of impurity-native defect complexes. , 1995, Physical review letters.
[26] Daniel S. Green,et al. Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition , 2003 .
[27] Michael Kneissl,et al. Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures , 1999 .