A circuit-level perspective of the optimum gate oxide thickness
暂无分享,去创建一个
[1] R. Holm. The Electric Tunnel Effect across Thin Insulator Films in Contacts , 1951 .
[2] W. Shockley,et al. A Unipolar "Field-Effect" Transistor , 1952, Proceedings of the IRE.
[3] S. M. Sze,et al. Physics of semiconductor devices , 1969 .
[4] Gordon E. Moore,et al. Progress in digital integrated electronics , 1975 .
[5] B. T. Murphy,et al. Unified field-effect transistor theory including velocity saturation , 1980 .
[6] J. J. Sakurai,et al. Modern Quantum Mechanics , 1986 .
[7] Kjell O. Jeppson,et al. CMOS Circuit Speed and Buffer Optimization , 1987, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.
[8] S. L. Garverick,et al. A simple model for scaled MOS transistors that includes field-dependent mobility , 1987 .
[9] D. A. Bell,et al. 0.5 micron CMOS for high performance at 3.3 V , 1988, Technical Digest., International Electron Devices Meeting.
[10] A. R. Newton,et al. Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas , 1990 .
[11] Takayasu Sakurai,et al. Delay analysis of series-connected MOSFET circuits , 1991 .
[12] Anantha P. Chandrakasan,et al. Low-power CMOS digital design , 1992 .
[13] James D. Meindl,et al. Opportunities for Scaling FET's for Gigascale Integration (GSI) , 1993, ESSDERC '93: 23rd European solid State Device Research Conference.
[14] Richard Green,et al. A high performance 0.35 /spl mu/m logic technology for 3.3 V and 2.5 V operation , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.
[15] James D. Meindl,et al. Low power microelectronics: retrospect and prospect , 1995, Proc. IEEE.
[16] M. Heyns,et al. Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures , 1995 .
[17] S. Tiwari,et al. Self‐consistent modeling of accumulation layers and tunneling currents through very thin oxides , 1996 .
[18] H. Wong,et al. CMOS scaling into the nanometer regime , 1997, Proc. IEEE.
[19] Y. Taur,et al. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's , 1997, IEEE Electron Device Letters.
[20] K. Evans-Lutterodt,et al. Ultra-thin, 1.0-3.0 nm, gate oxides for high performance sub-100 nm technology , 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).
[21] Jeffrey A. Davis,et al. A stochastic wire-length distribution for gigascale integration (GSI). II. Applications to clock frequency, power dissipation, and chip size estimation , 1998 .
[22] James D. Meindl,et al. A generic system simulator with novel on-chip cache and throughput models for gigascale integration , 1998 .
[23] D. Frank,et al. 25 nm CMOS design considerations , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
[24] Azeez J. Bhavnagarwala,et al. Minimum supply voltage for bulk Si CMOS GSI , 1998, Proceedings. 1998 International Symposium on Low Power Electronics and Design (IEEE Cat. No.98TH8379).
[25] James D. Meindl,et al. A LOW POWER TRANSREGIONAL MOSFET MODEL CMOS GIGASCALE INTEGRATION (GSI) * FOR COMPLETE POWER-DELAY ANALYSIS OF , 1998 .
[26] Chenming Hu,et al. Gate engineering for deep-submicron CMOS transistors , 1998 .
[27] Eric M. Vogel,et al. Modeled tunnel currents for high dielectric constant dielectrics , 1998 .
[28] S. Thompson. MOS Scaling: Transistor Challenges for the 21st Century , 1998 .
[29] Towards a Compact Model for MOSFETs with Direct Tunneling Gate Dielectrics , 1999, 29th European Solid-State Device Research Conference.
[30] James D. Meindl,et al. A physical alpha-power law MOSFET model , 1999 .
[31] J. Wortman,et al. Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices , 1999 .
[32] D. Muller,et al. The electronic structure at the atomic scale of ultrathin gate oxides , 1999, Nature.
[33] Jung-Suk Goo,et al. Direct tunneling current model for circuit simulation , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
[34] G. Dewey,et al. 30 nm physical gate length CMOS transistors with 1.0 ps n-MOS and 1.7 ps p-MOS gate delays , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
[35] Shekhar Borkar,et al. Obeying Moore's law beyond 0.18 micron [microprocessor design] , 2000, Proceedings of 13th Annual IEEE International ASIC/SOC Conference (Cat. No.00TH8541).
[36] J. Wortman,et al. A comparative study of gate direct tunneling and drain leakage currents in n-MOSFET's with sub-2 nm gate oxides , 2000 .
[37] Keith A. Bowman,et al. A minimum total power methodology for projecting limits on CMOS GSI , 2000, IEEE Trans. Very Large Scale Integr. Syst..
[38] Mong-Song Liang,et al. A physical model for hole direct tunneling current in p/sup +/ poly-gate pMOSFETs with ultrathin gate oxides , 2000 .
[39] Lihui Wang,et al. Oxide Thickness Scaling Limit for Optimum CMOS Logic Circuit Performance , 2000, 30th European Solid-State Device Research Conference.