High performance low voltage amorphous oxide TFT Enhancement/Depletion inverter through uni-/bi-layer channel hybrid integration

A novel amorphous oxide TFT Enhancement/Depletion (E/D) inverter through uni-/bi-layer channel hybrid integration with conventional process is demonstrated. The device's threshold voltages (Vth) is strictly controlled and the fabrication technique is specially designed. Comparing to the reported high speed bootstrapped inverter, the output swing, switching voltage gain and noise margin of E/D inverter are greatly improved and only the ring oscillator's speed is slightly degraded while with a small supply voltage of 5V.