Design and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers.

We present the design and room-temperature lasing characteristics of single nanowires containing coaxial GaAs/AlGaAs multiple quantum well (MQW) active regions. The TE01 mode, which has a doughnut-shaped intensity profile and is polarized predominantly in-plane to the MQWs, is predicted to lase in these nanowire heterostructures and is thus chosen for the cavity design. Through gain and loss calculations, we determine the nanowire dimensions required to minimize loss for the TE01 mode and determine the optimal thickness and number of QWs for minimizing the threshold sheet carrier density. In particular, we show that there is a limit to the minimum and maximum number of QWs that are required for room-temperature lasing. Based on our design, we grew nanowires of a suitable diameter containing eight uniform coaxial GaAs/AlGaAs MQWs. Lasing was observed at room temperature from optically pumped single nanowires and was verified to be from TE01 mode by polarization measurements. The GaAs MQW nanowire lasers have a threshold fluence that is a factor of 2 lower than that previously demonstrated for room-temperature GaAs nanowire lasers.

[1]  C. Ning,et al.  Modal gain in a semiconductor nanowire laser with anisotropic bandstructure , 2004, IEEE Journal of Quantum Electronics.

[2]  Yasuhiko Arakawa,et al.  Room-temperature lasing in a single nanowire with quantum dots , 2015 .

[3]  Bin Zhang,et al.  Size-dependent waveguide dispersion in nanowire optical cavities: slowed light and dispersionless guiding. , 2009, Nano letters.

[4]  C. Ning,et al.  Dynamical color-controllable lasing with extremely wide tuning range from red to green in a single alloy nanowire using nanoscale manipulation. , 2013, Nano letters.

[5]  P. Eklund,et al.  Optical antenna effect in semiconducting nanowires. , 2008, Nano letters.

[6]  H. Tan,et al.  Mode Profiling of Semiconductor Nanowire Lasers. , 2015, Nano letters.

[7]  Chennupati Jagadish,et al.  Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process. , 2007, Nano letters.

[8]  H. Tan,et al.  Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing. , 2014, Nano letters.

[9]  P. Yang,et al.  Self-Organized GaN Quantum Wire UV Lasers , 2003 .

[10]  K. Köhler,et al.  Auger recombination in intrinsic GaAs , 1993 .

[11]  G. Abstreiter,et al.  Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control , 2016 .

[12]  Yasuhiko Arakawa,et al.  Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum well lasers , 1985 .

[13]  Federico Capasso,et al.  Laser action in nanowires: Observation of the transition from amplified spontaneous emission to laser oscillation , 2008 .

[14]  Limin Tong,et al.  Single-nanowire single-mode laser. , 2011, Nano letters.

[15]  F. Capasso,et al.  Low threshold room-temperature lasing of CdS nanowires , 2012, Nanotechnology.

[16]  Kelly P. Knutsen,et al.  Single gallium nitride nanowire lasers , 2002, Nature materials.

[17]  Yong Ding,et al.  Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers. , 2008, Nature materials.

[18]  D. Vanmaekelbergh,et al.  Phase-correlated nondirectional laser emission from the end facets of a ZnO nanowire. , 2006, Nano letters.

[19]  Connie Chang-Hasnain,et al.  Nanolasers Grown on Silicon , 2011, 1101.3305.

[20]  L. Coldren,et al.  Diode Lasers and Photonic Integrated Circuits: Coldren/Diode Lasers 2E , 2012 .

[21]  Y. Uematsu,et al.  Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers , 1985, IEEE Journal of Quantum Electronics.

[22]  Charles M. Lieber,et al.  Single-nanowire electrically driven lasers , 2003, Nature.

[23]  L. Coldren,et al.  Diode Lasers and Photonic Integrated Circuits , 1995 .

[24]  Chennupati Jagadish,et al.  Low ensemble disorder in quantum well tube nanowires. , 2015, Nanoscale.

[25]  H. Tan,et al.  Optically pumped room-temperature GaAs nanowire lasers , 2013, Nature Photonics.

[26]  Yasuhiko Arakawa,et al.  Quantum well lasers--Gain, spectra, dynamics , 1986 .

[27]  Federico Capasso,et al.  Optically pumped nanowire lasers: invited review , 2010 .

[28]  A. Waag,et al.  Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers , 2009, Nanotechnology.

[29]  A. Bloom.  Quantum Electronics , 1972, Nature.

[30]  J. Etheridge,et al.  Polarity-driven 3-fold symmetry of GaAs/AlGaAs core multishell nanowires. , 2013, Nano letters.

[31]  Charles M. Lieber,et al.  GaN nanowire lasers with low lasing thresholds , 2005 .

[32]  Z. Mi,et al.  Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature. , 2015, Nature nanotechnology.

[33]  Mahendra K. Sunkara,et al.  Near-infrared semiconductor subwavelength-wire lasers , 2006 .

[34]  Philippe Caroff,et al.  Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires , 2016, Nature Communications.