A 40-nm 0.5-V 12.9-pJ/Access 8T SRAM Using Low-Energy Disturb Mitigation Scheme
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Shunsuke Okumura | Shusuke Yoshimoto | Masahiko Yoshimoto | Hiroshi Kawaguchi | Toshikazu Suzuki | Shinji Miyano | Masaharu Terada
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