论文信息 - Temperature Dependence of the Subthreshold Characteristics of Dynamic Threshold Metal–Oxide–Semiconductor Field-Effect Transistors and Its Application to an Absolute-Temperature Sensing Scheme for Low-Voltage Operation

Temperature Dependence of the Subthreshold Characteristics of Dynamic Threshold Metal–Oxide–Semiconductor Field-Effect Transistors and Its Application to an Absolute-Temperature Sensing Scheme for Low-Voltage Operation

In this report the author proposes an absolute-temperature sensing scheme based on the temperature dependence of the subthreshold current–voltage characteristics of dynamic threshold metal–oxide–semiconductor (DTMOS) field-effect transistor devices. The proposed sensing scheme requires neither a voltage higher than 0.5 V nor initial precise calibration. It is suitable for silicon-on-insulator (SOI) circuits based on the SOI technology using an SOI substrate, but it can also be easily applied to bulk MOS devices.

Mamoru Terauchi

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