AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs

Data are presented demonstrating a GaAs‐based metal–oxide semiconductor field effect transistor employing in the gate region a laterally formed native oxide of AlAs. The gate oxide, formed by a water vapor process, is similar to that used successfully in recently developed semiconductor laser devices. The transistors described here represent an extension of the ‘‘wet’’ oxidation Al‐based III–V native oxide technology employed successfully in light‐emitting and laser devices.