Electronic structure of Pt based topological Heusler compounds with C1b structure and zero band gap
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Claudia Felser | Chandra Shekhar | Shigenori Ueda | Keisuke Kobayashi | G. Fecher | C. Felser | C. Shekhar | S. Ueda | Keisuke L. I. Kobayashi | Gerhard H. Fecher | Siham Ouardi | S. Ouardi | G. Stryganyuk | Xeniya Kozina | Gregory Stryganyuk | X. Kozina
[1] W. Jeitschko,et al. Equiatomic Rare Earth ( Ln) Transition Metal Antimonides LnTSb ( T=Rh, lr) and Bismuthides LnTBi ( T=Rh, Ni, Pd, Pt) , 2002 .
[2] M. A. Kouacou,et al. Crossover from semiconductor to magnetic metal in semi-Heusler phases as a function of valence electron concentration , 1998 .
[3] Chao Zhang,et al. Zero-gap materials for future spintronics, electronics and optics , 2010 .
[4] Claudia Felser,et al. Tunable multifunctional topological insulators in ternary Heusler compounds. , 2010, Nature materials.
[5] G. Fecher,et al. Electronic transport properties of electron- and hole-doped semiconducting C1b Heusler compounds: NiTi1−xMxSn (M=Sc, V) , 2010 .
[6] Xiaolin Wang,et al. Proposal for a new class of materials: spin gapless semiconductors. , 2008, Physical review letters.
[7] Burke,et al. Generalized Gradient Approximation Made Simple. , 1996, Physical review letters.
[8] Keisuke L. I. Kobayashi. Hard X-ray photoemission spectroscopy , 2009 .
[9] Joel E Moore,et al. The birth of topological insulators , 2010, Nature.
[10] P. Torelli,et al. Bulk electronic properties of V2O3 probed by hard X-ray photoelectron spectroscopy , 2007 .
[11] G. Fecher,et al. Thermoelectric properties and electronic structure of substituted Heusler compounds: NiTi0.3−xScxZr0.35Hf0.35Sn , 2010 .
[12] K.H.J. Buschow,et al. New Class of Materials: Half-Metallic Ferromagnets , 1983 .
[13] E. Bucher,et al. Thermoelectrical properties of the compounds ScMVIIISb and YMVIIISb (MVIII = Ni, Pd, Pt) , 2003 .
[14] M. Shirai,et al. Role of electronic structure in the martensitic phase transition of Ni2Mn(1+x)Sn(1-x) studied by hard-X-ray photoelectron spectroscopy and Ab initio calculation. , 2010, Physical review letters.
[15] G. Fecher,et al. Detection of the valence band in buried Co2MnSi–MgO tunnel junctions by means of photoemission spectroscopy , 2008 .
[16] C. Felser,et al. I-II-V half-Heusler compounds for optoelectronics: Ab initio calculations , 2010 .
[17] J. Zegenhagen,et al. Looking 100 Å deep into spatially inhomogeneous dilute systems with hard x-ray photoemission , 2004 .
[18] Keisuke L. I. Kobayashi. High-resolution hard X-ray photoelectron spectroscopy: Application of valence band and core-level spectroscopy to materials science , 2005 .
[19] M. Kanatzidis,et al. New and old concepts in thermoelectric materials. , 2009, Angewandte Chemie.