论文信息 - Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer - 字舞流文

Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer

T. Egawa | A. Wakejima | A. Ando | Y. Osada | R. Kamimura | A. Watanabe | T. Kubo | Keita Inoue