Multiwavelength, densely-packed 2 x 2 vertical-cavity surface-emitting laser array fabricated using selective oxidation
暂无分享,去创建一个
[1] Diana L. Huffaker,et al. Temperature dependence of the transverse lasing mode in vertical‐cavity lasers , 1995 .
[2] P. Dapkus,et al. Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation , 1995 .
[3] Kenichi Iga,et al. A record low threshold InGaAs/GaAlAs vertical-cavity surface-emitting laser , 1995 .
[4] 이형재,et al. Selectively Oxidized Vertical-Cavity Surface-Emitting Lasers , 1996 .
[5] D. Deppe,et al. Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers , 1994 .
[6] A. R. Sugg,et al. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices , 1990 .
[7] Diana L. Huffaker,et al. Low threshold half-wave vertical-cavity lasers , 1994 .
[8] J. Sarathy,et al. Low-threshold continuous-wave surface emitting lasers with etched void confinement , 1994, IEEE Photonics Technology Letters.
[9] Kent D. Choquette,et al. Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency , 1995 .
[10] D.G. Deppe,et al. Fabrication of high-packing-density vertical cavity surface-emitting laser arrays using selective oxidation , 1996, IEEE Photonics Technology Letters.
[11] Kent D. Choquette,et al. Cavity Characteristics of Selectively Oxidized Vertical-Cavity Lasers , 1995, Quantum Optoelectronics.
[12] Chung-En Zah,et al. Multiple wavelength tunable surface-emitting laser arrays , 1991 .
[13] Diana L. Huffaker,et al. Lasing characteristics of low threshold microcavity lasers using half‐wave spacer layers and lateral index confinement , 1995 .