论文信息 - High performance and high reliability AlGaN/GaN HEMTs

High performance and high reliability AlGaN/GaN HEMTs

In this paper, a current status and future technologies of high-power GaN HEMTs was described. First, commercialization roadmap was shown with output power and efficiency status. Power electronics benchmark was also introduced. Reliability improvement technologies were addressed with recent issues such as drift phenomena. Then, future requirements for expanding GaN electronics market were shown with some recent device developments. Novel E-mode recessed GaN-HEMT has been developed using the triple cap layer structure. High-k insulated gate HEMTs using Ta2O5 were also developed. Finally, we described the next generation GaN HEMTs for millimeter-wave applications. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

[1] Walter Kruppa,et al. Trapping effects and microwave power performance in AlGaN/GaN HEMTs , 2001 .

[2] H. Zirath,et al. 1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor , 2002, IEEE Electron Device Letters.

[3] K. Joshin,et al. High power and high gain AlGaN/GaN MIS‐HEMTs with high‐k dielectric layer , 2008 .

[4] L. Dobrzyński,et al. Observation Of Native Ga Vacancies In Gan By Positron Annihilation , 1997 .

[5] Y. Okamoto,et al. 30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs , 2005, IEEE Transactions on Microwave Theory and Techniques.

[6] Naoki Hara,et al. High‐fmax GaN HEMT with high breakdown voltage over 100 V for millimeter‐wave applications , 2007 .