Programmable Spin Logic Based on Spin Hall Effect in a Single Device

Spin logic devices, due to their programmability and nonvolatility, are deemed as an ideal building block for the next generation of electronics. Though several types of spin logic based on domain wall motion, spin-field-effect transistor and automata made of magnetic nanoparticles have been proposed, an architecture with scalability, energy efficiency and compatibility with current complementary metal-oxide-semiconductor technology is still in urgent demand. Here, it is experimentally demonstrated that the spin Hall effect in magnetic films with perpendicular anisotropy can be utilized to construct such a spin logic device. Five commonly used logic gates with nonvolatility in a single device are realized. This demonstration could pave the way towards application of spintronics in logic circuits as well as the memory industry in the near future and could even give birth to logic-in-memory computing architectures.

[1]  S. Auffret,et al.  Ultrafast magnetization switching by spin-orbit torques , 2013, 1310.5586.

[2]  D. Ralph,et al.  Current-induced switching of perpendicularly magnetized magnetic layers using spin torque from the spin Hall effect. , 2012, Physical review letters.

[3]  Suk Hee Han,et al.  Magnetic-field-controlled reconfigurable semiconductor logic , 2013, Nature.

[4]  Dmitri E. Nikonov,et al.  Benchmarking spintronic logic devices based on magnetoelectric oxides , 2014 .

[5]  J. Sinova,et al.  Spin Hall effects , 2015 .

[6]  Dmitri E. Nikonov,et al.  Material Targets for Scaling All Spin Logic , 2012, ArXiv.

[7]  Zhang,et al.  Spin hall effect in the presence of spin diffusion , 2000, Physical review letters.

[8]  S Takahashi,et al.  Room-temperature reversible spin Hall effect. , 2007, Physical review letters.

[9]  B. Koopmans,et al.  Field-free magnetization reversal by spin-Hall effect and exchange bias , 2015, Nature Communications.

[10]  Dmitri E. Nikonov,et al.  Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking , 2013, Proceedings of the IEEE.

[11]  Xiaozhong Zhang,et al.  Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect , 2016, Advanced materials.

[12]  L. J. Sham,et al.  Spin-based logic in semiconductors for reconfigurable large-scale circuits , 2007, Nature.

[13]  L. You,et al.  Spin Hall effect clocking of nanomagnetic logic without a magnetic field. , 2014, Nature nanotechnology.

[14]  D Petit,et al.  Magnetic Domain-Wall Logic , 2005, Science.

[15]  Remo Guidieri.  Res , 1995, RES: Anthropology and Aesthetics.

[16]  Hongyuan Wei,et al.  Nanoring magnetic tunnel junction and its application in magnetic random access memory demo devices with spin-polarized current switching (invited) , 2008 .

[17]  D. Ralph,et al.  Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum , 2012, Science.

[18]  H. Ohno,et al.  A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. , 2010, Nature materials.

[19]  S. Bandiera,et al.  Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection , 2011, Nature.

[20]  J. Hirsch.  Spin Hall Effect , 1999, cond-mat/9906160.

[21]  S. Datta,et al.  Proposal for an all-spin logic device with built-in memory. , 2010, Nature nanotechnology.

[22]  R. Wiesendanger,et al.  Realizing All-Spin–Based Logic Operations Atom by Atom , 2011, Science.

[23]  K. H. Ploog,et al.  Programmable computing with a single magnetoresistive element , 2003, Nature.

[24]  Robert O. Winder,et al.  Threshold logic , 1971, IEEE Spectrum.

[25]  S. Datta,et al.  Electronic analog of the electro‐optic modulator , 1990 .

[26]  A Imre,et al.  Majority Logic Gate for Magnetic Quantum-Dot Cellular Automata , 2006, Science.

[27]  Raúl Rojas,et al.  Neural Networks - A Systematic Introduction , 1996 .

[28]  X. F. Han,et al.  Electrical control over perpendicular magnetization switching driven by spin-orbit torques , 2016 .

[29]  A. Hoffmann.  Spin Hall Effects in Metals , 2013, IEEE Transactions on Magnetics.

[30]  R. Cowburn,et al.  Room temperature magnetic quantum cellular automata , 2000, Science.

[31]  C. Xiong,et al.  Silicon‐Based Current‐Controlled Reconfigurable Magnetoresistance Logic Combined with Non‐Volatile Memory , 2015 .

[32]  Dmitri E. Nikonov,et al.  Energy-delay performance of giant spin Hall effect switching for dense magnetic memory , 2013, 1301.5374.

[33]  H. Ohno,et al.  Magnetization switching by spin-orbit torque in an antiferromagnet-ferromagnet bilayer system. , 2015, Nature materials.