Si/GexSi/sub 1-x/ heterojunction bipolar transistors with the GexSi/sub 1-x/ base formed by Ge ion implantation in Si
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V. Raineri | S. Lombardo | S. U. Campisano | A. Pinto | S. Lombardo | A. Pinto | V. Raineri | G. La Rosa | P. Ward | G. La Rosa | G. Privitera | S.U. Campisano | P. Ward | G. Privitera
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