Observation of silicon carbide Schottky barrier diode under applied reverse bias using atomic force microscopy/Kelvin probe force microscopy/scanning capacitance force microscopy

We have observed a commercial silicon-carbide Schottky barrier diode (SiC-SBD) using our novel analysis system, in which atomic force microscopy (AFM) is combined with both Kelvin probe force microscopy (KFM; for surface-potential measurement) and scanning capacitance force microscopy (SCFM; for differential-capacitance measurement). The results obtained for the SiC-SBD under an applied reverse bias indicate both the scan area in the sample and a peak value of the SCFM signal in the region where the existence of trapped electrons is deduced from the KFM analysis. Thus, our measurement system can be used to examine commercial power devices; however, novel polishing procedures are required in order to investigate the Schottky contact region.

[1]  Hidekazu Yamamoto,et al.  Investigation of the depletion layer by scanning capacitance force microscopy with Kelvin probe force microscopy , 2016 .

[2]  K. Matsushige,et al.  Noncontact-mode scanning capacitance force microscopy towards quantitative two-dimensional carrier profiling on semiconductor devices , 2007 .

[3]  Akira Kamisawa,et al.  Development of SiC diodes, power MOSFETs and intelligent power modules , 2009 .

[4]  R. Raghunathan,et al.  High voltage 4H-SiC Schottky barrier diodes , 1995, IEEE Electron Device Letters.

[5]  R. Johnson,et al.  Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review , 1996 .

[6]  Lin Zhu,et al.  Analytical Modeling of High-Voltage 4H-SiC Junction Barrier Schottky (JBS) Rectifiers , 2008, IEEE Transactions on Electron Devices.

[7]  E. Meyer,et al.  Improving the Design of the Shield for the Electric Field in SiC-Based Schottky-Rectifiers and Ion-Implantation Cascades by SPM Dopant-Imaging , 2015 .

[8]  Y. Kuk,et al.  Electrical characterization of an operating Si pn-junction diode with scanning capacitance microscopy and Kelvin probe force microscopy , 2001 .

[9]  K. Matsushige,et al.  Local potential profiling of operating carbon nanotube transistor using frequency-modulation high-frequency electrostatic force microscopy , 2013 .

[10]  H. K. Wickramasinghe,et al.  Kelvin probe force microscopy , 1991 .

[11]  H. Matsunami,et al.  Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes , 2005 .

[12]  Kazuya Ohuchi,et al.  High-resolution characterization of ultrashallow junctions by measuring in vacuum with scanning spreading resistance microscopy , 2007 .

[13]  Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging , 2016 .

[14]  K. Matsushige,et al.  Dopant profiling on semiconducting sample by scanning capacitance force microscopy , 2002 .

[15]  K. Matsushige,et al.  Surface potential measurements by the dissipative force modulation method , 2004 .

[16]  Hiroyuki Sugimura,et al.  Potential shielding by the surface water layer in Kelvin probe force microscopy , 2002 .

[17]  D. Rugar,et al.  Frequency modulation detection using high‐Q cantilevers for enhanced force microscope sensitivity , 1991 .

[18]  N. Cheung,et al.  Extraction of Schottky diode parameters from forward current-voltage characteristics , 1986 .

[19]  T. Urushidani,et al.  High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistances , 1993, IEEE Electron Device Letters.

[20]  T. Chow,et al.  Silicon carbide benefits and advantages for power electronics circuits and systems , 2002, Proc. IEEE.

[21]  Enrico Zanoni,et al.  Richardson’s constant in inhomogeneous silicon carbide Schottky contacts , 2003 .

[22]  T. Ujihara,et al.  Photovoltage Mapping on Polycrystalline Silicon Solar Cells by Kelvin Probe Force Microscopy with Piezoresistive Cantilever , 2007 .

[23]  K. Matsushige,et al.  Two-dimensional dopant profiling by scanning capacitance force microscopy , 2003 .

[24]  Young Kuk,et al.  Imaging of a silicon pn junction under applied bias with scanning capacitance microscopy and Kelvin probe force microscopy , 2000 .

[25]  Yasuo Cho,et al.  Visualization of charges stored in the floating gate of flash memory by scanning nonlinear dielectric microscopy , 2006, Nanotechnology.

[26]  Hiroshi Itoh,et al.  Analog frequency modulation detector for dynamic force microscopy , 2001 .

[27]  Sascha Sadewasser,et al.  Amplitude or frequency modulation-detection in Kelvin probe force microscopy , 2003 .