Two‐Terminal Asymmetrical and Symmetrical Silicon Negative Resistance Switches

By making use of an emitter region shorted by a metallic contact to an adjacent base region, a new form of p‐n‐p‐n switch is obtained. Several new structures are described, including a symmetrical (or ac) switch. Typical experimental results on switches which breakdown in the range from 25 to 40 v are presented.

[1]  R. W. Aldrich,et al.  Multiterminal P-N-P-N Switches , 1958, Proceedings of the IRE.

[2]  J. M. Goldey,et al.  P-N-P-N Transistor Switches , 1956, Proceedings of the IRE.

[3]  J. Ebers,et al.  Four-Terminal P-N-P-N Transistors , 1952, Proceedings of the IRE.

[4]  I. M. Mackintosh.  The Electrical Characteristics of Silicon P-N-P-N Triodes , 1958, Proceedings of the IRE.

[5]  A. Jonscher.  p-n-p-n Switching Diodes , 1957 .