Interface investigation of planar hybrid n-Si/PEDOT:PSS solar cells with open circuit voltages up to 645 mV and efficiencies of 12.6 %

We have studied interface formation properties of hybrid n-Si/PEDOT:PSS solar cells on planar substrates by varying the silicon substrate doping concentration (ND). Final power conversion efficiencies (PCE) of 12.6 % and open circuit voltages (Voc) comparable to conventional diffused emitter pn junction solar cells have been achieved. It was observed, that an increase of ND leads to an increase of Voc with a maximal value of 645 mV, which is, to our knowledge, the highest reported value for n-Si/PEDOT:PSS interfaces. The dependence of the solar cell characteristics on ND is analyzed and similarities to minority charge carrier drift-diffusion limited solar cells are presented. The results point out the potential of hybrid n-Si/PEDOT:PSS interfaces to fabricate high performance opto-electronic devices with cost-effective fabrication technologies.

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