论文信息 - Development of gate-lag effect on GaAs power MESFETs during aging

Development of gate-lag effect on GaAs power MESFETs during aging

We have observed a gradual degradation of the output power not accompanied by drifts in the classical basic static parameters of a GaAs power MESFET. We report in the letter that this phenomenon can be explained by the development, during aging, of the gate-lag effect.

D. Lecrosnier | J. Dumas | F. Garat

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