论文信息 - A bonded-SOI-wafer CMOS 16-bit 50-ksps delta-sigma ADC

A bonded-SOI-wafer CMOS 16-bit 50-ksps delta-sigma ADC

A CMOS 16-b 50-ks/s delta-sigma ADC (analog-to-digital converter) on a bonded-silicon-on-insulator (SOI) wafer has been fabricated. An 87-dB dynamic range and an 8-dB SNR improvement compared to results for a conventional wafer have been achieved. The SOI with trench structure eliminated noise interference, because the analog portion and the digital one were electrically isolated between their substrates. In addition, the accuracy was improved by stable diffusion resistors which were free from the dependence on the substrate voltage.<<ETX>>

Osamu Kobayashi | Toshiharu Takaramoto | M. Sawada | S. Harajiri | K. Gotoh

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