论文信息 - Simulation of a Short-Channel 4H-SiC UMOSFET with Buried p Epilayer for Low Oxide Electric Field and Switching Loss - 字舞流文

Simulation of a Short-Channel 4H-SiC UMOSFET with Buried p Epilayer for Low Oxide Electric Field and Switching Loss

S. Dimitrijev | Z. Wen | Zhanwei Shen | G. Yan | Xingfang Liu | Wanshun Zhao | Guosheng Sun | Yiping Zeng | Lei Wang | Jisheng Han | Feng Zhang | Guoguo Yan | Zhengxin Wen