Gate-Induced Drain Leakage in Ldd and Fully-Overlapped Ldd Mosfets

[1]  A new LDD structure: total overlap with polysilicon spacer (TOPS) , 1990, IEEE Electron Device Letters.

[2]  T. Chan,et al.  Subbreakdown drain leakage current in MOSFET , 1987, IEEE Electron Device Letters.