Measuring and analyzing Random Telegraph Noise in Nanoscale Devices: The case of resistive random access memories

In this paper, we discuss some of the measurement and analysis techniques for Random Telegraph Noise (RTN). Due to its detrimental impact on devices, RTN mechanism must be investigated and integrated into device models. However, RTN analysis requires a self-consistent framework in which automated measurement techniques, data analysis procedures, and physics-based modeling are blended together. Here we discuss guidelines to perform corrrect RTN measurements, and statistical techniques to perform advanced data analysis. This allows getting reliable results, which can lead to an unbiased physical interpretation of the phenomenon. The statistical analysis of RTN measured in hafnium oxide RRAM devices allows revealing the mechanism leading to the wide RTN fluctuations in high-resistive state, as well as the physical properties of the defect species involved in this phenomenon.

[1]  Bo Wang,et al.  A low cost and high reliability true random number generator based on resistive random access memory , 2015, 2015 IEEE 11th International Conference on ASIC (ASICON).

[2]  M. Terai,et al.  Memory-State Dependence of Random Telegraph Noise of $ \hbox{Ta}_{2}\hbox{O}_{5}/\hbox{TiO}_{2}$ Stack ReRAM , 2010, IEEE Electron Device Letters.

[3]  Ru Huang,et al.  Impacts of Random Telegraph Noise (RTN) on Digital Circuits , 2015, IEEE Transactions on Electron Devices.

[4]  G.E. Moore,et al.  Cramming More Components Onto Integrated Circuits , 1998, Proceedings of the IEEE.

[5]  V. Reddy,et al.  Impact of Sampling Rate on RTN Time Constant Extraction and Its Implications on Bias Dependence and Trap Spectroscopy , 2014, IEEE Transactions on Device and Materials Reliability.

[6]  L. Larcher,et al.  An Empirical Model for RRAM Resistance in Low- and High-Resistance States , 2013, IEEE Electron Device Letters.

[7]  Paolo Pavan,et al.  Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices , 2016, IEEE Transactions on Instrumentation and Measurement.

[8]  D. Gilmer,et al.  Metal oxide resistive memory switching mechanism based on conductive filament properties , 2011 .

[9]  L. Goux,et al.  Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

[10]  Javier Martin-Martinez,et al.  New Weighted Time Lag Method for the Analysis of Random Telegraph Signals , 2014, IEEE Electron Device Letters.

[11]  G. Bersuker,et al.  Spectroscopic properties of oxygen vacancies in monoclinic HfO2 calculated with periodic and embedded cluster density functional theory , 2007 .

[12]  Luca Larcher,et al.  A compact model of hafnium-oxide-based resistive random access memory , 2013, Proceedings of 2013 International Conference on IC Design & Technology (ICICDT).

[13]  Luca Larcher,et al.  Random Telegraph Signal noise properties of HfOx RRAM in high resistive state , 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

[14]  W. B. Knowlton,et al.  A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks , 2011, IEEE Transactions on Electron Devices.

[15]  Andrea Padovani,et al.  A Complete Statistical Investigation of RTN in HfO2-Based RRAM in High Resistive State , 2015, IEEE Transactions on Electron Devices.

[16]  Alessandro Calderoni,et al.  Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices , 2016, IEEE Transactions on Electron Devices.

[17]  H. Hwang,et al.  Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems , 2016, IEEE Transactions on Electron Devices.

[18]  Shimeng Yu,et al.  A highly reliable and tamper-resistant RRAM PUF: Design and experimental validation , 2016, 2016 IEEE International Symposium on Hardware Oriented Security and Trust (HOST).

[19]  Shimeng Yu,et al.  On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, monte carlo simulation, and experimental characterization , 2011, 2011 International Electron Devices Meeting.

[20]  Shimeng Yu,et al.  Verilog-A compact model for oxide-based resistive random access memory (RRAM) , 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

[21]  Francesco Maria Puglisi,et al.  Factorial Hidden Markov Model analysis of Random Telegraph Noise in Resistive Random Access Memories , 2014 .

[22]  Luca Larcher,et al.  Bipolar Resistive RAM Based on ${\rm HfO}_{2}$: Physics, Compact Modeling, and Variability Control , 2016, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.

[23]  Gennadi Bersuker,et al.  A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis , 2014, IEEE Transactions on Electron Devices.

[24]  M. Kobayashi,et al.  Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs , 2012, 2012 International Electron Devices Meeting.

[25]  Tibor Grasser,et al.  Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities , 2012, Microelectron. Reliab..

[26]  A. Shluger,et al.  Mechanism of interstitial oxygen diffusion in hafnia. , 2002, Physical review letters.

[27]  Frederick T. Chen,et al.  Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[28]  R. Degraeve,et al.  RTN insight to filamentary instability and disturb immunity in ultra-low power switching HfOx and AlOx RRAM , 2013, 2013 Symposium on VLSI Technology.

[29]  Ashwani Kumar,et al.  Hybrid CMOS-OxRAM RNG circuits , 2016, 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).

[30]  An Chen,et al.  Utilizing the Variability of Resistive Random Access Memory to Implement Reconfigurable Physical Unclonable Functions , 2015, IEEE Electron Device Letters.

[31]  L. Larcher,et al.  Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling , 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

[32]  Eddy Simoen,et al.  (Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare , 2011 .

[33]  Kenneth L. Shepard,et al.  Random telegraph noise in 45-nm CMOS: Analysis using an on-chip test and measurement system , 2010, 2010 International Electron Devices Meeting.

[34]  Luca Larcher,et al.  RTS noise characterization of HfOx RRAM in high resistive state , 2013 .

[35]  M. J. Kirton,et al.  Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise , 1989 .

[36]  Francesco Maria Puglisi,et al.  RTN analysis with FHMM as a tool for multi-trap characterization in HfOX RRAM , 2013, 2013 IEEE International Conference of Electron Devices and Solid-state Circuits.

[37]  L. Larcher,et al.  Instability of HfO2 RRAM devices: Comparing RTN and cycling variability , 2014, 2014 IEEE International Reliability Physics Symposium.

[38]  Hiroyuki Ochi,et al.  Multi-trap RTN parameter extraction based on Bayesian inference , 2013, International Symposium on Quality Electronic Design (ISQED).

[39]  Farnood Merrikh-Bayat,et al.  Training and operation of an integrated neuromorphic network based on metal-oxide memristors , 2014, Nature.

[40]  D. Gilmer,et al.  Random telegraph noise (RTN) in scaled RRAM devices , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

[41]  J. F. Zhang,et al.  Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[42]  Luca Larcher,et al.  Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS , 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

[43]  Luca Larcher,et al.  A microscopic physical description of RTN current fluctuations in HfOx RRAM , 2015, 2015 IEEE International Reliability Physics Symposium.

[44]  Marc Porti,et al.  New insights on the origin of Resistive switching in HfO2 thin films: The role of local mechanical strength , 2015, 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits.

[45]  H. Y. Lee,et al.  New observations on the regular and irregular noise behavior in a resistance random access memory , 2014, 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).

[46]  D. Gilmer,et al.  Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics , 2012, 2012 International Electron Devices Meeting.

[47]  A. Shluger,et al.  Vacancy and interstitial defects in hafnia , 2002 .