A 26 to 40GHz Wideband SiGe Balanced Power Amplifier IC

An integrated SiGe PA is presented for wideband applications covering 26 to 40 GHz. No distributed amplifier or negative feedback techniques are employed to achieve wideband performance. The 42% fractional-bandwidth PA has a gain of 13 dB and a saturated output power of 19.4 dBm with 11.2% PAE from 32 to 33 GHz. The output P1 dB and Psat are greater than 15.5 dBm and 17 dBm, respectively, from 26 to 40 GHz. The 1.83 mm2 chip consumes 525 mW (375 mA) from a 1.4 V supply.

[1]  H. Schumacher,et al.  24 and 36 GHz SiGe HBT power amplifiers , 2004, Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004..

[2]  Brittin C. Kane,et al.  Smart Phased Array SoCs: A Novel Application for Advanced SiGe HBT BiCMOS Technology , 2005, Proceedings of the IEEE.

[3]  J.P. Comeau,et al.  A Monolithic 24 GHz, 20 dBm, 14% PAE SiGe HBT Power Amplifier , 2006, 2006 European Microwave Conference.

[4]  B. Gaucher,et al.  SiGe bipolar transceiver circuits operating at 60 GHz , 2005, IEEE Journal of Solid-State Circuits.

[5]  A. Hajimiri,et al.  A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon , 2006, IEEE Journal of Solid-State Circuits.

[6]  Hans-Martin Rein,et al.  Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors , 2001 .

[7]  T.S.D. Cheung,et al.  A 21-26-GHz SiGe bipolar power amplifier MMIC , 2005, IEEE Journal of Solid-State Circuits.

[8]  A. Hajimiri,et al.  A 24-GHz, +14.5-dBm fully integrated power amplifier in 0.18-/spl mu/m CMOS , 2005, IEEE Journal of Solid-State Circuits.

[9]  I. Gresham,et al.  Design of 24 GHz SiGe HBT balanced power amplifier for system-on-a-chip ultra-wideband applications , 2005, 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers.