论文信息 - 3.3 ps electrical pulse generation from a discharge-based metal-semiconductor-metal photodetector

3.3 ps electrical pulse generation from a discharge-based metal-semiconductor-metal photodetector

An ultrashort electrical pulse with a pulse width of 3.3 ps was generated successfully from an ordinary metal-semiconductor-metal photodetector simply by adding an input resistor and hold capacitor. The new detector not only provides ultrashort fall time, but also has other advantages such as ease of fabrication, high sensitivity, and low-bias operation.

[1] Tadao Nagatsuma,et al. A differential photoconductive AND gate with Be-doped low-temperature-grown InGaAs-InAlAs MQW MSM-PD's , 1997 .

[2] Stephen Y. Chou,et al. Nanoscale tera-hertz metal-semiconductor-metal photodetectors , 1992 .

[3] Yi-Jen Chiu,et al. Metal-semiconductor-metal traveling-wave photodetectors , 2001, IEEE Photonics Technology Letters.

[4] D. Miller,et al. Ultrafast differential sample and hold using low-temperature-grown GaAs MSM for photonic A/D conversion , 2001, IEEE Photonics Technology Letters.