Low frequency noise characterization in 0.13 mum p-MOSFETs. Impact of scaled-down 0.25, 0.18 and 0.13 mum technologies on 1/f noise

Abstract This paper presents an experimental analysis of the noise measurements performed in 0.13 μm technology p-MOS transistors operating from weak to strong inversion in ohmic and saturation regimes. The 1/ f noise origin is interpreted in terms of carrier number with correlated mobility fluctuations. The contribution of the access resistance noise is noticed for large overdrive voltages. The slow oxide trap density N t ( E F ) and the Coulomb scattering noise parameter α s have been extracted. Then the 1/ f noise level in the three scaled-down p-MOSFETs generations (0.25, 0.18 and 0.13 μm) is compared. The variation of the noise parameter values is discussed with respect to the technology node. The highest oxide trap density is obtained for the thinnest gate oxide. It is concluded that the oxide thinning should lead to noise reduction only if the product t ox 2 . N t is taken into consideration. This trend will be significant in future scaled-down MOSFETs.

[1]  M. Valenza,et al.  1/f Noise in amorphous silicon thin film transistors: effect of scaling down , 1999 .

[2]  G. Ghibaudo,et al.  Impact of scaling down on low frequency noise in silicon MOS transistors , 1992 .

[3]  G. Reimbold,et al.  Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states , 1984, IEEE Transactions on Electron Devices.

[4]  Cor Claeys,et al.  Impact of silicidation on the excess noise behaviour of MOS transistors , 1995 .

[5]  L.K.J. Vandamme,et al.  1/f noise in MOS devices, mobility or number fluctuations? , 1994 .

[6]  G. Ghibaudo.  Critical MOSFETs operation for low voltage/low power IC's: ideal characteristics, parameter extraction, electrical noise and RTS fluctuations , 1997 .

[7]  M. Marin,et al.  1/f noise in 0.18 μm technology n-MOSFETs from subthreshold to saturation , 2002 .

[8]  J. A. López-Villanueva,et al.  Universality of electron mobility curves in MOSFETs: a Monte Carlo study , 1995 .

[9]  Cor Claeys,et al.  On the flicker noise in submicron silicon MOSFETs , 1999 .

[10]  Peter Händel,et al.  Noise in physical systems and 1/f fluctuations , 1993 .

[11]  Fischetti,et al.  Monte Carlo study of electron transport in silicon inversion layers. , 1993, Physical review. B, Condensed matter.

[12]  E. P. Vandamme,et al.  Critical discussion on unified 1/f noise models for MOSFETs , 2000 .

[13]  J. A. López-Villanueva,et al.  A comprehensive model for Coulomb scattering in inversion layers , 1994 .

[14]  Gerard Ghibaudo,et al.  Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors , 1991 .

[15]  Fang Wang,et al.  An improved physics-based 1/f noise model for deep sub-micron MOSFETs , 2001 .

[16]  V. Bareikis,et al.  Noise in Physical Systems and 1/F Fluctuations - Proceedings of the 13th International Conference , 1995 .

[17]  Thomas Skotnicki,et al.  Low frequency noise in thin gate oxide MOSFETs , 2001, Microelectron. Reliab..

[18]  C. Hu,et al.  A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .