Polarity Inversions of the Photo‐Hall E.M.F.

The inversion of the sign of the photo-Hall voltage is investigated in almost intrinsic semiconductors being illuminated with light in the region of the fundamental absorption. It is shown theoretically that single or double inversions are possible if only one type of centres is considered. The inclusion of traps gives single, double or triple inversions. Numerical solutions of these cases are represented. The experimental data agree well with the theoretical curves. [Russian Text Ignored].