论文信息 - A proposed low-offset sense amplifier for SRAM applications

A proposed low-offset sense amplifier for SRAM applications

Random variations play a critical role in determining SRAM yield, by affecting both the bitcell and the read Sense Amplifiers (SA). A low-offset sense amplifier capable of static random access memory (SRAM) applications has been presented in this work. Simulated results show that the proposed sense amplifier has very low offset of 31.284 mV compared to the conventional sense amplifiers.

Wazir Singh | Anil Kumar Gundu | Sai Manoj Divi

[1] B. Wicht,et al. Analysis and compensation of the bitline multiplexer in SRAM current sense amplifiers , 2001 .

[2] Kiat Seng Yeo,et al. High-performance low-power current sense amplifier using a cross-coupled current-mirror configuration , 2002 .

[3] Bharadwaj Amrutur,et al. A replica technique for wordline and sense control in low-power SRAM's , 1998, IEEE J. Solid State Circuits.

[4] Mohab Anis,et al. A methodology for statistical estimation of read access yield in SRAMs , 2008, 2008 45th ACM/IEEE Design Automation Conference.

[5] Yukihiro Fujimoto,et al. A current-controlled latch sense amplifier and a static power-saving input buffer for low-power architecture , 1993 .

[6] M. Singh,et al. Design and implementation of an embedded 512-KB level-2 cache subsystem , 2005, IEEE Journal of Solid-State Circuits.

[7] Lee-Sup Kim,et al. A low-power SRAM using hierarchical bit line and local sense amplifiers , 2005, IEEE J. Solid State Circuits.

[8] Kaushik Roy,et al. Statistical design and optimization of SRAM cell for yield enhancement , 2004, ICCAD 2004.

[9] Shih-Lun Chen,et al. Self-isolated gain-enhanced sense amplifier , 2002, Proceedings. IEEE Asia-Pacific Conference on ASIC,.

[10] G. V. Kristovski,et al. New sense amplifier for small-swing CMOS logic circuits , 2000 .