Atomistic simulation of RTA annealing for shallow junction formation characterizing both BED and TED

*Email: yum@ ime.pku.ed u.cn Abstract An atomistic model for annealing simulation is presented. To well simulate both BED (Boron Enhanced Diffusion)"' and TED (Transient Enhanced Diffusion), the surface emission model, which describes the emission of point defects from surface during annealing, is implemented. The simulation is carried out for RTA annealing (1OOO'C or l 0 5 O T ) after B implantation. The implantation energy varies from 0.5kev to 13kev. Agreements between simulation and SIMS data are achieved. Both BED and TED phenomena are characterized. The Enhancement of diffusion is discussed.