21㏈m의 출력을 갖는 24㎓ 전력 증폭기 설계

In this paper an MMIC 3-stage power amplifier is designed 0.15㎛ P-HEMT based 0.5W MMIC. The P-HEMT process, electro-mobility is high with low substrate resistance. The bias condition for the MMIC was fixed in which the drive stage bias is Vds = 6V and Ids= 318 ㎃ with Vgs = 0.75V. Chip size is 3755*1755㎛².