HIGH-DIELECTRIC CONSTANT THIN FILMS FOR DYNAMIC RANDOM ACCESS MEMORIES (DRAM)

▪ Abstract We discuss high-dielectric films, in general, oxide ferroelectrics based on simple perovskite structures and related Aurivillius-phase layered structure perovskites employed as thin-film capacitors in dynamic random access memories (DRAMs). Emphasis is on breakdown mechanisms and limits, leakage currents, electrodes and electrode interfaces, scaling to submicron geometries, and deposition techniques.

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