论文信息 - Modeling hot-electrons effects in silicon-on-sapphire MOSFETs

Modeling hot-electrons effects in silicon-on-sapphire MOSFETs

A unified, closed form analytical drain current model for partially and fully depleted SOS MOSFETs was investigated. The analytical model was developed using first order principles of operation of the device and basic explanation of the physical constraints responsible for hot carriers effects. The approach solved for the channel field to find closed form solutions for the critical voltages giving rise to kink effects and output nonlinearities. The reliability of the model was addressed and verified with experimental data.

Eugenio Culurciello | Andreas G. Andreou | Philippe O. Pouliquen

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