论文信息 - Modeling of deep-submicrometer MOSFETs: random impurity effects, threshold voltage shifts and gate capacitance attenuation

Modeling of deep-submicrometer MOSFETs: random impurity effects, threshold voltage shifts and gate capacitance attenuation

The authors present simulation results for the subthreshold characteristics of n-channel MOSFETs with 0.1 /spl mu/m gate-length and 0.05 /spl mu/m gate-width obtained with our 3D-DD simulator. We also presented a new method that one can successfully use in a particle-based simulator to properly account for the short-range portions of the e-e and e-i interactions without double-counting the long-range portions of these two interaction terms.

D. Vasileska | D.K. Ferry | W.J. Gross

[1] E. H. Nicollian,et al. The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance technique , 1967 .

[2] Paolo Lugli,et al. The Monte Carlo method for semiconductor device and process modeling , 1990, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[3] A. Toriumi,et al. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's , 1994 .

[4] Hiroshi Iwai,et al. A study on hot carrier effects on N-MOSFETs under high substrate impurity concentration , 1995 .

[5] Renate Sitte,et al. Device parameter changes caused by manufacturing fluctuations of deep submicron MOSFET's , 1994 .

[6] Steven E. Laux. On particle-mesh coupling in Monte Carlo semiconductor device simulation , 1996, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[7] D. K. Ferry,et al. 3D simulation of deep-submicron devices. How impurity atoms affect conductance , 1995 .

[8] P. Stolk,et al. Modeling statistical dopant fluctuations in MOS transistors , 1998 .