A highly accurate Gummel plot model for thermal design of high‐power microwave HBTs

An accurate Gummel plot model of HBT at a wide range of current level and temperatures has been established. The model contains a bias- and temperature-dependent parasitic resistance and temperature-dependent temperature coefficient of base–emitter turn-on voltage. The average error between the measurement data and calculated results was below 4% at 300–450 K, indicating that this model is useful for the optimum thermal design of high-power HBTs. © 1997 John Wiley & Sons, Inc. Microwave Opt Technol Lett 16: 38–41, 1997.