Stability Constraints in SiGe Epitaxy
暂无分享,去创建一个
[1] D. C. Houghton,et al. Strain relaxation kinetics in Si(1-x)Ge(x)/Si heterostructures , 1991 .
[2] G. Osbourn. Strained-layer superlattices: A brief review , 1986 .
[3] J. W. Matthews,et al. Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks , 1975 .
[4] J. W. Matthews,et al. Defects in epitaxial multilayers: III. Preparation of almost perfect multilayers , 1976 .
[5] H. Osten,et al. Considerations about the critical thickness for pseudomorphic Si1-xGex growth on Si(001) , 1994 .
[6] D. Houghton. Nucleation rate and glide velocity of misfit dislocations in Si1−xGex/(100) Si heterostructures , 1990 .
[7] Bean,et al. Activation barriers to strain relaxation in lattice-mismatched epitaxy. , 1989, Physical review. B, Condensed matter.
[8] Fischer,et al. Strain and surface phenomena in SiGe structures. , 1996, Physical review. B, Condensed matter.
[9] D. Houghton. Misfit dislocation dynamics in Si1−xGex/(100) Si: Uncapped alloy layers, buried strained layers, and multiple quantum wells , 1990 .
[10] John C. Bean,et al. Interpretation of dislocation propagation velocities in strained GexSi1−x/Si(100) heterostructures by the diffusive kink pair model , 1991 .
[11] J. Wortman,et al. Young's Modulus, Shear Modulus, and Poisson's Ratio in Silicon and Germanium , 1965 .
[12] E. Kasper,et al. Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substrates , 1977 .
[13] L. Freund,et al. Role of dislocation blocking in limiting strain relaxation in heteroepitaxial films , 1994 .
[14] J. Tsao,et al. Erratum: Relaxation of strained‐layer semiconductor structures via plastic flow [Appl. Phys. Lett. 51, 1325 (1987)] , 1988 .
[15] Frank Reginald Nunes Nabarro,et al. Mathematical theory of stationary dislocations , 1952 .
[16] C. Gibbings,et al. A quantitative analysis of strain relaxation by misfit dislocation glide in Si1−xGex/Si heterostructures , 1990 .
[17] W. Jesser,et al. The effect of frictional stress on the calculation of critical thickness in epitaxy , 1990 .
[18] Monitoring of deposition and dry etching of Si/SiGe multiple stacks , 1996 .
[19] A. Fischer,et al. On plastic flow and work hardening in strained layer heterostructures , 1994 .
[20] R. People,et al. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures , 1985 .
[21] J. Willis,et al. Work hardening and strain relaxation in strained‐layer buffers , 1991 .
[22] Jeffrey Y. Tsao,et al. Relaxation of strained-layer semiconductor structures via plastic flow , 1987 .
[23] J. W. Matthews,et al. Defects in epitaxial multilayers: I. Misfit dislocations* , 1974 .
[24] J. H. Merwe. Structure of epitaxial crystal interfaces , 1972 .
[25] A. Fischer,et al. An equilibrium model for buried SiGe strained layers , 2000 .