论文信息 - Porous silicon-based potassium ion selective electrode

Porous silicon-based potassium ion selective electrode

Porous silicon (PS)-based potassium ion selective microelectrode (K/sup +/ISME) was fabricated by using microelectronic planar process and electrochemical anodization etching technique. The apparent sensing area of the K/sup +/ISME is 8 mm by 8 mm. The calibration curve for the K/sup +/ISME is linear within a wide range of pK=1.0/spl sim/4.0. Its slope is 56 mV per decade, which is near Nernst response. The long-term stability of the K/sup +/ISME is good. The variation of the response is within /spl plusmn/2 mV during 2 months. Good performances of the K/sup +/ISME are attributed to large specific surface area and easily modified microstructure of PS.

[1] N. Jaffrezic‐Renault,et al. Porous silicon as a potentiometric transducer for ion detection: effect of the porosity on the sensor response , 2001 .

[2] Peter Kordos,et al. Novel electrochemical sensors with structured and porous semiconductor/insulator capacitors , 2000 .

[3] J. W. Schultze,et al. Capacitive microsensors for biochemical sensing based on porous silicon technology , 2000 .

[4] H. Maaref,et al. Porous silicon as substrate for ion sensors , 1999 .

[5] J. W. Schultze,et al. Miniaturization of potentiometric sensors using porous silicon microtechnology , 1997 .