论文信息 - Uniformity and Endurance Enhancement of Valance Changed Resistive Switching Memory (VCM) by a New Pulse Method

Uniformity and Endurance Enhancement of Valance Changed Resistive Switching Memory (VCM) by a New Pulse Method

In this work, we enhance the uniformity (cycle-to-cycle) and endurance characteristics of Valance Changed Resistive Switching Memory (VCM) by using an optimized programming strategy. This enhancement can be attributed to the eliminated over-reset process benefiting from the reduced reset pulse energy by this new pulse method. This work provides a useful tool for improving the reliability of RRAM technology.

[1] J. Robertson,et al. Materials selection for oxide-based resistive random access memories , 2014 .

[2] Qi Liu,et al. Uniformity and Retention Improvement of TaOx-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering , 2017, IEEE Electron Device Letters.

[3] Qing Luo,et al. 40× Retention Improvement by Eliminating Resistance Relaxation with High Temperature Forming in 28 nm RRAM Chip , 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

[4] D. Ielmini,et al. Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices , 2009, IEEE Transactions on Electron Devices.

[5] Jason P. Campbell,et al. Compliance-Free Pulse Forming of Filamentary RRAM , 2016 .

[6] R. Dittmann,et al. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.