30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency
暂无分享,去创建一个
Tetsuya Suemitsu | Toshiaki Tamamura | Takatomo Enoki | Haruki Yokoyama | Yasunobu Ishii | Tetsuyoshi Ishii | T. Enoki | T. Tamamura | H. Yokoyama | T. Suemitsu | Y. Ishii | T. Ishii
[1] T. Enoki,et al. 0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects , 1994 .
[2] Masaya Notomi,et al. Quantum Wire Fabrication by E-Beam Elithography Using High-Resolution and High-Sensitivity E-Beam Resist ZEP-520 , 1992 .
[3] Tetsuya Suemitsu,et al. Improved Recessed-Gate Structure for Sub-0.1-µm-Gate InP-Based High Electron Mobility Transistors , 1998 .
[4] T. Mimura,et al. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions , 1980 .
[5] Toshiaki Tamamura,et al. High-Aspect-Ratio Nanometer-Pattern Fabrication Using Fullerene-Incorporated Nanocomposite Resists for Dry-Etching Application , 1997 .