Analysis and Design of a CMOS Ultra-High-Speed Burst Mode Imager with In-Situ Storage Topology Featuring In-Pixel CDS Amplification

This paper presents an in-situ storage topology for ultra-high-speed burst mode imagers, enabling low noise operation while keeping a high frame depth. The proposed pixel architecture contains a 4T pinned photodiode, a correlated double sampling (CDS) amplification stage, and an in-situ memory bank. Focusing on the sampling noise, the system level trade-off of the proposed pixel architecture is discussed, showing its advantages on the noise, power, and scaling capability. Integrated with an AC coupling CDS stage, the amplification is obtained by exploiting the strong capacitance to the voltage relation of a single NMOS transistor. A comprehensive noise model is developed for optimizing the trade-off between the area and noise. As a proof-of-concept, a prototype imager with a 30 µm pixel pitch was fabricated in a CMOS 130 nm technology. A 108-cell memory bank is implemented allowing dense layout and parallel readout. Two types of CDS amplification stages were investigated. Despite the limited memory capacitance of 10 fF/cell, the photon transfer curves of both pixel types were measured over different operation speeds up to 20 Mfps showing a noise performance of 8.4 e−.

[1]  Kazuhiro Shimonomura,et al.  The Theoretical Highest Frame Rate of Silicon Image Sensors , 2017, Sensors.

[2]  Qiyin Fang,et al.  CMOS Active-Pixel Sensor With In-Situ Memory for Ultrahigh-Speed Imaging , 2011, IEEE Sensors Journal.

[3]  Yannis Tsividis,et al.  Discrete-time parametric amplification based on a three-terminal MOS varactor: analysis and experimental results , 2003 .

[4]  Diego Gutierrez,et al.  Femto-photography , 2013, ACM Trans. Graph..

[5]  Shoji Kawahito,et al.  Noise calculation model and analysis of high-gain readout circuits for CMOS image sensors , 2008, Electronic Imaging.

[6]  Fumiteru Akamatsu,et al.  Time evolution of the high temperature region formed by laser induced breakdown and of the development of the flame kernel in the constant volume combustion vessel , 2017, International Congress on High-Speed Imaging and Photonics.

[7]  M. Versluis,et al.  Sonoprinting and the importance of microbubble loading for the ultrasound mediated cellular delivery of nanoparticles. , 2016, Biomaterials.

[8]  Rihito Kuroda,et al.  A Global-Shutter CMOS Image Sensor With Readout Speed of 1-Tpixel/s Burst and 780-Mpixel/s Continuous , 2013, IEEE Journal of Solid-State Circuits.

[9]  Matteo Perenzoni,et al.  A 160 × 120 Pixel Analog-Counting Single-Photon Imager With Time-Gating and Self-Referenced Column-Parallel A/D Conversion for Fluorescence Lifetime Imaging , 2016, IEEE J. Solid State Circuits.

[10]  S. Sugawa,et al.  An over 1Mfps global shutter CMOS image sensor with 480 frame storage using vertical analog memory integration , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[11]  George Jie Yuan,et al.  A 1500 fps Highly Sensitive 256 , ˟, 256 CMOS Imaging Sensor With In-Pixel Calibration , 2012, IEEE J. Solid State Circuits.

[12]  Detlef Lohse,et al.  Brandaris 128: A digital 25 million frames per second camera with 128 highly sensitive frames , 2003 .

[13]  Yoshiaki Takemoto,et al.  A rolling-shutter distortion-free 3D stacked image sensor with −160dB parasitic light sensitivity in-pixel storage node , 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

[14]  T. Hayashida,et al.  Evolution of Ultra-High-Speed CCD Imagers , 2007 .

[15]  Tomoo Okinaka,et al.  A 16 Mfps 165kpixel backside-illuminated CCD , 2011, 2011 IEEE International Solid-State Circuits Conference.

[16]  Tongxi Wang,et al.  4.8 A 0.44e−rms read-noise 32fps 0.5Mpixel high-sensitivity RG-less-pixel CMOS image sensor using bootstrapping reset , 2017, 2017 IEEE International Solid-State Circuits Conference (ISSCC).

[17]  Shin Kikuchi,et al.  A 300mm wafer-size CMOS image sensor with in-pixel voltage-gain amplifier and column-level differential readout circuitry , 2011, 2011 IEEE International Solid-State Circuits Conference.

[18]  Elias Kristensson,et al.  Implementation of a multiplexed structured illumination method to achieve snapshot multispectral imaging. , 2017, Optics express.

[19]  Abbas El Gamal,et al.  A 256×256 CMOS image sensor with ΔΣ-based single-shot compressed sensing , 2012, 2012 IEEE International Solid-State Circuits Conference.

[20]  E. Charbon,et al.  Toward 1Gfps: Evolution of ultra-high-speed image sensors -ISIS, BSI, multi-collection gates, and 3D-stacking- , 2014, 2014 IEEE International Electron Devices Meeting.

[21]  Matteo Perenzoni,et al.  A 160$\times$ 120-Pixels Range Camera With In-Pixel Correlated Double Sampling and Fixed-Pattern Noise Correction , 2011, IEEE Journal of Solid-State Circuits.

[22]  Christian Enz,et al.  A Sub-0.5 Electron Read Noise VGA Image Sensor in a Standard CMOS Process , 2016, IEEE Journal of Solid-State Circuits.

[23]  P. Wambacq,et al.  A 20 Mfps high frame-depth CMOS burst-mode imager with low power in-pixel NMOS-only passive amplifier , 2017, International Congress on High-Speed Imaging and Photonics.

[24]  R. Turchetta,et al.  Kirana: a solid-state megapixel uCMOS image sensor for ultrahigh speed imaging , 2013, Electronic Imaging.

[25]  D. Lohse,et al.  Drop Shaping by Laser-Pulse Impact , 2015, 1502.00503.

[26]  Kartikeya Murari,et al.  A CMOS In-Pixel CTIA High-Sensitivity Fluorescence Imager , 2011, IEEE Transactions on Biomedical Circuits and Systems.

[27]  Cheng Lei,et al.  Optical time-stretch imaging: Principles and applications , 2016 .

[28]  Toshiki Arai,et al.  A 252-${\rm V/lux}{\cdot}{\rm s}$, 16.7-Million-Frames-Per-Second 312-kpixel Back-Side-Illuminated Ultrahigh-Speed Charge-Coupled Device , 2013, IEEE Transactions on Electron Devices.

[29]  Yasuhiro Awatsuji.  Ultrafast 3D imaging by holography , 2017, International Congress on High-Speed Imaging and Photonics.

[30]  J. Janesick,et al.  Scientific Charge-Coupled Devices , 2001 .

[31]  A. Theuwissen,et al.  Solid-State Imaging with Charge-Coupled Devices , 1995 .

[32]  Peter Seitz,et al.  A sub-electron readout noise CMOS image sensor with pixel-level open-loop voltage amplification , 2011, 2011 IEEE International Solid-State Circuits Conference.

[33]  Rihito Kuroda,et al.  A linear response single exposure CMOS image sensor with 0.5e− readout noise and 76ke− full well capacity , 2015, 2015 Symposium on VLSI Circuits (VLSI Circuits).

[34]  S. Kleinfelder,et al.  High-speed CMOS image sensor circuits with in situ frame storage , 2004, IEEE Transactions on Nuclear Science.

[35]  Keisuke Goda.  Extreme Imaging and Beyond , 2015 .