First Demonstration of Junctionless Accumulation-Mode Bulk FinFETs With Robust Junction Isolation

A junctionless-accumulation-mode (JAM) p-channel MOSFET is successfully implemented based on a junction-isolated bulk FinFET for the first time. The JAM devices with a fin width of 16 nm show outstanding transfer characteristics: 1) subthreshold swing (SS<sub>min</sub>) = 68 mV/dec; 2) drain-induced-barrier-lowering is 9 mV/V; and 3) I<sub>ON</sub>/I<sub>OFF</sub> ratio >1 × 10<sup>6</sup>. The JAM devices with smaller fin widths or longer gate lengths give superior short-channel characteristics and higher threshold voltages (V<sub>th</sub>) due to their enhanced gate electrostatic controllability. The reverse back bias modulates V<sub>th</sub> and SS favorably by virtue of a body-tied device, maintaining the substrate current due to junction leakage of <;1 × 10<sup>-11</sup> A.

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